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PolarHV TM
Power MOSFET
IXTA 8N50P
IXTP 8N50P
V DSS
I D25
R DS(on)
= 500
= 8
≤ 0.8
V
A
?
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (IXTA)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
500
500
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
E AS
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
±30
±40
8
14
8
20
400
V
V
A
A
A
mJ
mJ
G
TO-220 (IXTP)
S
(TAB)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 18 ?
10
V/ns
G
D S
(TAB)
P D
T C = 25 ° C
150
W
T J
T JM
T stg
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
-55 ... +150
150
-55 ... +150
300
260
° C
° C
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
International standard packages
M d
Weight
Mounting torque
TO-220
TO-263
(TO-220)
1.13/10 Nm/lb.in.
4 g
3 g
Features
l
l
Unclamped Inductive Switching (UIS)
rated
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
Low package inductance
- easy to drive and to protect
BV DSS
V GS = 0 V, I D = 250 μ A
500
V
Advantages
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 100 μ A
V GS = ± 30 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
3.0
5.5
± 100
5
50
V
nA
μ A
μ A
l
l
l
Easy to mount
Space savings
High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.8
?
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DS99321E(03/06)
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